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| IPD640N06L G OptiMOS(R) Power-Transistor Features * For fast switching converters and sync. rectification * N-channel enhancement - logic level * 175 C operating temperature * Avalanche rated * Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID 60 64 18 V m A Type IPD640N06L G Package Type IPD640N06L G Marking PG-TO252-3 640N06L PG-TO252-3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 18 12 72 43 6 20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C1) I D=18 A, R GS=25 I D=18 A, V DS=20 V, di /dt =200 A/s, T j,max=175 C mJ kV/s V W C T C=25 C 47 -55 ... 175 55/175/56 See figure 3 Rev. 1.2 page 1 2006-03-27 IPD640N06L G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=16 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=18 A V GS=4.5 V, I D=12 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=18 A 60 1.2 1.6 0.01 2 1 A V 3.2 75 50 K/W Values typ. max. Unit 9.5 1 10 47 64 1.2 19 100 100 64 85 S nA m 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 2) Rev. 1.2 page 2 2006-03-27 IPD640N06L G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 3) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=18 A, T j=25 C 0.99 18 72 1.3 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=0 V V DD=30 V, I D=18 A, V GS=0 to 10 V 1.4 0.5 3.6 4.5 10 4.2 3 1.9 0.7 5.4 6.5 13 4 V nC C iss C oss C rss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=15 A, R G=22 V GS=0 V, V DS=30 V, f =1 MHz 350 94 35 6 25 32 32 470 130 53 8 38 48 48 ns pF Values typ. max. Unit Reverse recovery time t rr V R=30 V, I F=I S, di F/dt =100 A/s - 30 45 ns Reverse recovery charge Q rr - 20 30 nC 3) See figure 16 for gate charge parameter definition Rev. 1.2 page 3 2006-03-27 IPD640N06L G 1 Power dissipation P tot=f(T C); V GS6 V 2 Drain current I D=f(T C); V GS10 V 50 20 40 15 30 P tot [W] I D [A] 20 10 0 0 50 100 150 200 10 5 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 102 1 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 limited by on-state resistance 10 s 100 s 0.5 101 DC 1 ms 100 0.2 Z thJC [K/W] I D [A] 0.1 0.05 0.02 10 ms 100 10-1 0.01 single pulse 10-1 10 -1 10-2 10 0 10 1 10 2 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.2 page 4 2006-03-27 IPD640N06L G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 30 10 V 5V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 120 3.5 V 4V 5.5 V 100 4.5 V 4.5 V 20 80 R DS(on) [m] I D [A] 5V 60 4V 5.5 V 10 V 10 3.5 V 40 20 3V 0 0 1 2 3 0 0 10 20 30 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 30 8 Typ. forward transconductance g fs=f(I D); T j=25 C 25 25 20 25 C 20 15 15 175 C g fs [S] 10 5 0 5 I D [A] 10 5 0 0 1 2 3 4 0 5 10 15 20 V GS [V] I D [A] Rev. 1.2 page 5 2006-03-27 IPD640N06L G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=18 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 160 2.5 140 2 120 160 A R DS(on) [m] 100 V GS(th) [V] 1.5 16 A 80 98 % 60 1 typ 40 0.5 20 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 1000 102 25 C 98% 175 C 98% 25 C Ciss 175 C 10 1 C [pF] 100 Coss I F [A] 100 10-1 Crss 10 0 5 10 15 20 25 30 0 1 V SD [V] 2 3 V DS [V] Rev. 1.2 page 6 2006-03-27 IPD640N06L G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=18 A pulsed parameter: V DD 12 30 V 10 12V 48 V 8 25 C 10 V GS [V] 100 1000 I AV [A] 100 C 6 4 150 C 2 1 1 10 0 0 2 4 6 8 10 12 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 75 V GS Qg 70 V BR(DSS) [V] 65 60 V g s(th) 55 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 50 T j [C] Rev. 1.2 page 7 2006-03-27 IPD640N06L G PG-TO252-3: Outline packaging: Rev. 1.2 page 8 2006-03-27 IPD640N06L G Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 9 2006-03-27 |
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